Properties investigation of thin silicon nitride layers synthesized by ion implantation
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 39 (3) , 163-167
- https://doi.org/10.1080/00337577808234470
Abstract
Structure and phase transformations of Si irradiated by nitrogen ions of 60 keV with doses from 5 × 1015 ions.cm−2 to 6 × 1017 ions.cm−2, and ion current density 20 μA cm−2 have been studied by transmission electron microscopy and ir absorption techniques. The samples were annealed in vacuum from 600°C to 1100°C.Keywords
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