Electron microscopic studies of silicon layers irradiated with high doses of nitrogen ions
- 16 July 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 36 (1) , 81-88
- https://doi.org/10.1002/pssa.2210360108
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The role of radiation damage in the crystallization kinetics of thin amorphous dielectric layersPhysica Status Solidi (a), 1975
- Effect of oxide impurities on the nitridation of high purity siliconJournal of Materials Science, 1974
- Thermal Oxidation of Silicon after Ion ImplantationJournal of the Electrochemical Society, 1973
- Infrared Studies of SiC, Si3N4, and SiO2 Formation in Ion-Implanted SiliconPublished by Springer Nature ,1971
- Crystal Structures of Silicon NitrideNature, 1957