Band-structure effects in the hot-carrier emission spectrum of GaAs FET devices
- 1 May 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (5S) , 659-661
- https://doi.org/10.1088/0268-1242/9/5s/069
Abstract
We have measured the hot-electron luminescence of GaAs HEMT devices over a broad spectral range in the infrared (0.4-1.4 eV). The emission intensity has spectral features suggesting that k-conserving, interconduction-band transitions dominate the emission process. The interpretation of emission spectra in terms of a hot-carrier distribution requires consideration of band-structure effects. In general this tends to reduce values of electron temperature Tel determined by the exponential fit to the experiment.Keywords
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