Hot carrier light emission from GaAs HEMT devices
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B564-B566
- https://doi.org/10.1088/0268-1242/7/3b/148
Abstract
The authors measure the spectrum of radiative emission from a high quality HEMT device and relate this to the energy distribution of the channel electrons. The discussion focuses on the intraband and interband contributions to the spectrum. The intraband, bremsstrahlung component gives evidence for very energetic electrons (Tel approximately=6000 K). The radiative recombination of carriers, however, is characterized by a very much lower temperature.Keywords
This publication has 5 references indexed in Scilit:
- Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETsElectronics Letters, 1991
- Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriersIEEE Electron Device Letters, 1990
- Electromagnetic radiation from hot carriers in FET-devicesSolid-State Electronics, 1989
- Hot-carrier light emission from silicon metal-oxide-semiconductor devicesApplied Physics Letters, 1988
- A study of photon emission from n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987