Hot-carrier transport in p-GaAs

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Abstract
Minority-electron transport properties in p-GaAs have been investigated using time-of-flight (TOF) and time-integrated/time-resolved photoluminescence (PL) measurements. It was found that with an increase in hole concentration the drift velocity decreases, a thermal nonequilibrium energy state exists between electrons and holes, and the energy relaxation time decreases. By combining these experimental data with a Monte Carlo calculation the scattering mechanisms in highly doped semiconductors were clarified. It was also found that energy and momentum transfers during the electron-hole interaction play an important role in the minority-electron transport for p-GaAs. This investigation revealed that the combination of an experimental approach using optical techniques, such at TOF or PL, with a theoretical approach such as a Monte Carlo calculation is indispensable in clarifying hot-carrier transport.