Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors

This publication has 33 references indexed in Scilit:

• Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface
  Applied Physics Letters, 2000
• Regimented placement of self-assembled Ge dots on selectively grown Si mesas
  Applied Physics Letters, 2000
• Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
  Physica E: Low-dimensional Systems and Nanostructures, 2000
• Ordered nucleation of Ge islands along high index planes on Si
  Materials Science and Engineering: B, 2000
• Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates
  Applied Physics Letters, 1999
• Evolution of hexagonal lateral ordering in strain-symmetrized ${\mathrm{P}\mathrm{b}\mathrm{S}\mathrm{e}/\mathrm{P}\mathrm{b}}_{1\mathrm{-}\mathrm{x}}{\mathrm{Eu}}_{\mathrm{x}}\mathrm{Te}$ quantum-dot superlattices
  Physical Review B, 1999
• Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
  Applied Physics Letters, 1998
• Lithographic positioning of self-assembled Ge islands on Si(001)
  Applied Physics Letters, 1997
• Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpitaxial Systems
  Physical Review Letters, 1997
• Atomic force microscopy study of strained InGaAs quantum disks self-organizing on GaAs (n11)B substrates
  Applied Physics Letters, 1994