Doping type dependence of 1.3 μm modulation-doped-MQW lasers under zero-bias modulation for high-speed optical interconnects
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 197-198
- https://doi.org/10.1109/ecoc.1998.732500
Abstract
The importance of the doping type for 1.3-/spl mu/m modulation-doped MQW lasers is extensively investigated for application to high-bit-rate optical interconnects under laser modulation without DC bias. We investigated, for the first time, the applicability of both p- and n-type modulation doped (MD) MQW lasers toward obtaining a clear eye opening under zero-bias modulation. We focused on the aspects of turn-on delay time and relaxation oscillation frequency. Our findings confirmed that the p-type MD-MQW laser is attractive for zero-bias modulation at operation over 2 Gbit/s.Keywords
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