Reduced turn-on delay time in 1.3 µm InGaAsP/InP n -typemodulation-doped strained multiquantum well lasers
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 809-811
- https://doi.org/10.1049/el:19950572
Abstract
Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 µm InGaAsP strained multiquantum well lasers for the first time.Keywords
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