Extremely low threshold (0.56 mA) operation in 1.3µmInGaAsP/InP compressive-strained-MQW lasers
- 24 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (24) , 2037-2038
- https://doi.org/10.1049/el:19941373
Abstract
A record low threshold current of 0.56 mA, as a long-wavelength laser, has been obtained in a 1.3 µm InGaAsP/InP strained-MQW laser, at room temperature (25°C), by optimising an active layer and by employing a short cavity with high-reflection coatings.Keywords
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