Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (12) , 852-853
- https://doi.org/10.1109/68.62007
Abstract
The effect of high-reflection facet coatings on strained-layer multiple-quantum-well lasers was studied and submilliampere-threshold lasers were made in the 1.5- mu m wavelength region with a short cavity and high-reflection-coated facets. As a result of the compressive strain, the threshold current density is loss-limited instead of transparency-limited. By the use of the step-graded-index separate confinement heterostructure to reduce the waveguide loss, a threshold current density of 550 A/cm/sup 2/ was measured on 30- mu m wide broad area lasers with 1-mm long cavity.Keywords
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