High-power and wide-temperature-range operations of InGaAsP-InP strained MQW lasers with reverse-mesa ridge-waveguide structure
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (1) , 13-15
- https://doi.org/10.1109/68.363391
Abstract
A new structure for an InP-based ridge-waveguide laser is demonstrated. It has a reverse-trapezoid-ridge shape that offers reduced threshold current and smaller series resistance suitable for wide-temperature-range and high power operations. A 1.3 /spl mu/m strained InGaAsP-InP MQW laser with the new ridge structure demonstrated over 200 mW output under a 440 mA injected current. Low threshold (0.3 W/A) operation was also achieved under 90/spl deg/C for 1.53 /spl mu/m strained MQW lasers.Keywords
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