High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility

This publication has 69 references indexed in Scilit:

• An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors
  IEEE Transactions on Nuclear Science, 1987
• Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments
  IEEE Transactions on Nuclear Science, 1987
• A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors
  IEEE Transactions on Nuclear Science, 1987
• Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
  Applied Physics Letters, 1986
• Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing
  IEEE Transactions on Nuclear Science, 1986
• Correlation of Radiation Effects in Transistors and Integrated Circuits
  IEEE Transactions on Nuclear Science, 1985
• Accounting for Dose-Enhancement Effects with CMOS Transistors
  IEEE Transactions on Nuclear Science, 1985
• Correlating the Radiation Response of MOS Capacitors and Transistors
  IEEE Transactions on Nuclear Science, 1984
• Physical Mechanisms Contributing to Device "Rebound"
  IEEE Transactions on Nuclear Science, 1984
• Super Recovery of Total Dose Damage in MOS Devices
  IEEE Transactions on Nuclear Science, 1984