Distribution of dopant in SiO2-Si
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7) , 3159-3166
- https://doi.org/10.1063/1.323110
Abstract
The distribution of dopant in SiO2‐Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived, on the assumptions that the oxide film grows in accordance with the t1/2 law and that before oxidation the dopant is uniformly distributed in the silicon. Cases in which tn≠t1/2 are discussed, with particular attention to the effect of n≳1/2 on the distribution of the dopant in the oxide. Calculations are provided for boron, describing its distribution in the oxide and in the silicon as a function of postoxidation anneal. Some experimental results concerning the distribution of boron in the silicon are provided for various oxide thicknesses, oxidation temperatures, and anneal times. These results were obtained from spreading‐resistance measurements.This publication has 17 references indexed in Scilit:
- Diffusion of Boron from Implanted Sources under Oxidizing ConditionsJournal of the Electrochemical Society, 1974
- Impurity Redistribution during Silicon Epitaxial Growth and Semiconductor Device ProcessingJournal of the Electrochemical Society, 1974
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- On the Redistribution of Boron in the Diffused Layer during Thermal OxidationJournal of the Electrochemical Society, 1970
- Impurity Redistribution in a Semiconductor during Thermal OxidationJournal of the Electrochemical Society, 1967
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964
- Growth and Structure of Si Oxide Films on Si SurfaceJapanese Journal of Applied Physics, 1963
- The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and SteamJournal of the Electrochemical Society, 1963
- Diffusion of Boron in Silicon through Oxide LayerJapanese Journal of Applied Physics, 1962