Dimethylarsine: Pyrolysis mechanisms and use for OMVPE growth
- 1 April 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (4) , 299-304
- https://doi.org/10.1007/bf02651288
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- OMVPE growth of GaAs using dimethylarsineJournal of Crystal Growth, 1989
- Effects of methylarsine homologs (CH3)nAsH3−n on the metalorganic vapor-phase epitaxy of GaAsJournal of Applied Physics, 1989
- Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsineApplied Physics Letters, 1989
- Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1988
- Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4Journal of Electronic Materials, 1988
- In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3Journal of Crystal Growth, 1988
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenicApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984