Manufacturability issues related to transient thermal annealing of titanium silicide films in a rapid thermal processor
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 4 (1) , 1-8
- https://doi.org/10.1109/66.75857
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.Journal of Applied Physics, 1980
- Spectral Emissivity of SiliconJapanese Journal of Applied Physics, 1967