On the location of ytterbium in GaP and GaAs lattices
- 15 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (6) , 3315-3317
- https://doi.org/10.1063/1.341509
Abstract
Yb-implanted layers in GaP and GaAs were analyzed by Rutherford backscattering and channeling of 1.7-MeV 4He+ ions. It is shown that Yb diffused to the surface and formed precipitates in both crystals, and the nonsubstitutional fraction of Yb in furnace annealed samples exceeded 95%. Pronounced segregation of Yb to the surface in laser annealed GaAs was also observed. Nonsubstitutional location of rare earth ions and their out-diffusion from the crystals seem to be the main difficulties in obtaining III–V semiconductors doped with rare-earth elements.This publication has 17 references indexed in Scilit:
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