Photoluminescence of GaSe(Cu) doped by ion implantation
- 30 April 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (4) , 341-343
- https://doi.org/10.1016/0038-1098(81)90476-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Direct and indirect excitonic emission in GaSePhysical Review B, 1981
- Ion Implantation — problems and perspectivesPhysica Status Solidi (a), 1978
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- Laser annealing of arsenic implanted siliconPhysics Letters A, 1977