Nucleation and growth of faceted voids in silicon crystals
- 1 March 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 198-199, 399-403
- https://doi.org/10.1016/s0022-0248(98)00978-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Vacancy-type microdefect formation in Czochralski siliconJournal of Crystal Growth, 1998
- Relationship between grown-in defects and thermal history during CZ Si crystal growthJournal of Crystal Growth, 1997
- Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si CrystalsJapanese Journal of Applied Physics, 1996
- The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski SiliconJournal of the Electrochemical Society, 1996
- The effect of thermal history during crystal growth on oxygen precipitation in Czochralski-grown siliconSemiconductor Science and Technology, 1992
- Electron-Microscopic Study of Microdefects in Silicon Single Crystals Grown at High SpeedPhysica Status Solidi (a), 1984
- The mechanism of swirl defects formation in siliconJournal of Crystal Growth, 1982