SiC BJT Technology for Power Switching and RF Applications

This publication has 5 references indexed in Scilit:

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  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• 1800 V, 3.8 A bipolar junction transistors in 4H-SiC
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• High-voltage implanted-emitter 4H-SiC BJTs
  IEEE Electron Device Letters, 2002
• 1800 V NPN bipolar junction transistors in 4H-SiC
  IEEE Electron Device Letters, 2001
• Demonstration of 4H-SiC power bipolar junctiontransistors
  Electronics Letters, 2000