Virtual plasma equipment model: a tool for investigating feedback control in plasma processing equipment
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Semiconductor Manufacturing
- Vol. 11 (3) , 486-494
- https://doi.org/10.1109/66.705383
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Model for noncollisional heating in inductively coupled plasma processing sourcesJournal of Applied Physics, 1997
- A semianalytic radio frequency sheath model integrated into a two-dimensional hybrid model for plasma processing reactorsJournal of Applied Physics, 1997
- A three-dimensional model for inductively coupled plasma etching reactors: Azimuthal symmetry, coil properties, and comparison to experimentsJournal of Applied Physics, 1996
- Ion drag effects in inductively coupled plasmas for etchingApplied Physics Letters, 1996
- Real time control of etch rate and selectivity using two colors laser interferometryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Control of semiconductor manufacturing equipment: real-time feedback control of a reactive ion etcherIEEE Transactions on Semiconductor Manufacturing, 1995
- An Inductively-Coupled Plasma Source for the Gaseous Electronics Conference Rf Reference CellJournal of Research of the National Institute of Standards and Technology, 1995
- Investigation of electron source and ion flux uniformity in high plasma density inductively coupled etching tools using two-dimensional modelingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Factors affecting the Cl atom density in a chlorine dischargeJournal of Applied Physics, 1992
- Real-time statistical process control using tool data (semiconductor manufacturing)IEEE Transactions on Semiconductor Manufacturing, 1992