Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 43 (5) , 1046-1052
- https://doi.org/10.1109/22.382064
Abstract
No abstract availableKeywords
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