On the origin of the additional electron diffraction spots from epitaxial (111) Si single-crystal films
- 1 July 1984
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 50 (1) , 1-7
- https://doi.org/10.1080/01418618408244207
Abstract
The origin of additional electron diffraction spots from epitaxial (111) Si single crystal films grown on CaF2 has been investigated. They have been found to arise from small particles containing a high density of stacking faults. These particles can be treated as an h.c.p. phase related to the matrix with (0001) hexagonal ∥ (111) cubic and [1010] hexagonal ∥ [121] cubic.Keywords
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