An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's
- 1 November 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (11) , 554-556
- https://doi.org/10.1109/55.192837
Abstract
A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFETs are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths.Keywords
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