Model of plasma immersion ion implantation for voltage pulses with finite rise and fall times

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Abstract
In plasma immersion ion implantation, a target is immersed in a plasma and a series of negative, high‐voltage pulses are applied to implant ions into the target. An approximate analytical model in one‐dimensional planar geometry is developed to determine the time‐varying implantation current, the total dose, and the energy distribution of the implanted ions for a voltage pulse with finite rise and fall times. Scaling rules are presented for the implanted current and energy distribution with respect to plasma density, peak applied voltage, and ion mass. Comparisons with numerical simulations are used to demonstrate that the accuracy of the model is well characterized by a single parameter: the ratio of the ion flight time to the pulse rise time.