The use of simulation in semiconductor technology development
- 30 June 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (6) , 591-623
- https://doi.org/10.1016/0038-1101(90)90173-c
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Characterization and modeling of materials for photolithographic simulationSolid-State Electronics, 1990
- Three-dimensional process and device modelingMicroelectronics Journal, 1989
- Generalized energy-momentum conservation equations in the relaxation time approximationSolid-State Electronics, 1987
- On the physics and modeling of small semiconductor devices—ISolid-State Electronics, 1980
- Simulation of semiconductor transport using coupled and decoupled solution techniquesSolid-State Electronics, 1980
- Calculation of hot electron phenomenaSolid-State Electronics, 1978
- Vacancy Double Jumps and Atomic Diffusion in Aluminum and SodiumPhysical Review Letters, 1977
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- Mathematical 2-dimensional model of semiconductor devicesElectronics Letters, 1971
- Iterative scheme for 1- and 2- dimensional d.c.-transistor simulationElectronics Letters, 1969