Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

1 June 2001

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 13 (6) , 541-543
https://doi.org/10.1109/68.924013

Abstract

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The QD excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a QD amplifier is found to be limited by the wetting-layer dynamics.

Keywords

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