InGaAs quantum dot lasers with sub-milliamp thresholdsand ultra-low threshold current density below room temperature
- 20 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (15) , 1283-1284
- https://doi.org/10.1049/el:20000909
Abstract
Continuous-wave operation of InGaAs quantum dot lasers is studied. A very low threshold current of 460 µA is achieved at 200 K for a 5 µm × 1170 µm oxide-confined stripe laser. For a larger stripe width of 11 µm, a threshold current density of 5.2 A/cm2 is demonstrated. The characteristic threshold temperature is ~700 K in the temperature range of 140–200 K, and drops rapidly around room temperature.Keywords
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