A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

This publication has 24 references indexed in Scilit:

• Properties of hot carrier induced traps in MOSFETs characterized by the floating-gate technique
  Solid-State Electronics, 1992
• Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging
  IEEE Electron Device Letters, 1990
• Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current
  IEEE Transactions on Electron Devices, 1990
• Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistors
  IEEE Transactions on Electron Devices, 1990
• Simulation of hot-electron trapping and aging of nMOSFETs
  IEEE Transactions on Electron Devices, 1988
• A hot-carrier analysis of submicrometer MOSFET's
  IEEE Electron Device Letters, 1988
• Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique
  IEEE Transactions on Electron Devices, 1986
• IMPACT—A point-defect-based two-dimensional process simulator: Modeling the lateral oxidation-enhanced diffusion of dopants in silicon
  IEEE Transactions on Electron Devices, 1986
• Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's
  IEEE Electron Device Letters, 1983
• Sensitive technique for measuring small MOS gate currents
  IEEE Electron Device Letters, 1980