A high-current density and long lifetime ECR source for oxygen implanters

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Abstract
A high‐current ECR source has been developed for oxygen implanters for use in fabricating separation by implanted oxygen (SIMOX) substrates. The new source has the following features: (1) high‐current density (150 mA/cm2) and large extracted current (more than 200 mA), (2) stable and long lifetime operation (more than 200 h), (3) high O+ ratio (more than 80%), and (4) low‐divergence beam. The improved performance is obtained by incorporating the following: (1) Localized high‐density plasma generation at the center of the plasma chamber. (2) A newly developed multilayer window to satisfy two requirements: efficient coupling of the microwave with high‐density plasma and high resistance to high‐speed backstream electrons. (3) Optimized combination of plasma chamber length and axial magnetic field distribution. (4) Sophisticated compact magnetic circuit that yields the optimum magnetic field for obtaining high‐density plasma. An industrial‐version ECR source was developed for production use on EATON NV‐200 implanters. The source was installed on an NV‐200 and used to implant oxygen ions to Si wafers. Good performance compared to a duopigatron source was obtained in terms of beam transport efficiency and reliability of source operation.

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