Very high current ECR ion source
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 242-245
- https://doi.org/10.1016/0168-583x(89)90780-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Very high current ECR ion source for an oxygen ion implanterNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam BombardmentJapanese Journal of Applied Physics, 1983
- Modification of mechanical properties by ion implantationThin Solid Films, 1980
- Electron backstream to the source plasma region in an ion sourceJournal of Applied Physics, 1980
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic PressureJapanese Journal of Applied Physics, 1980
- Microwave ion source for high-current implanterReview of Scientific Instruments, 1978