ZnSe epitaxy on a GaAs(110) surface

ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and transmission electron microscopy. An atomically flat and low defect homoepitaxial buffer GaAs(110) was grown with high V/III ratio $\text{(⩾150)}$ and at low growth temperature $\text{(∼430\hspace{0.17em}°}\mathrm{C}\mathrm{).}$ At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect ZnSe films (defect density ${\text{⩽10}}^5\hspace{0.17em}{\mathrm{cm}}^{\mathrm{-2}}$ ) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth.