Selenium treated (110) surfaces of GaAs and InP: valence band and geometric structure
- 20 April 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 307-309, 650-655
- https://doi.org/10.1016/0039-6028(94)91471-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Epitaxial Ga2Se3 layers grown on GaAs(100) using a heterovalent exchange reactionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- The atomic geometry of the Ge(111) surface as a function of temperature studied by photoemission and photoelectron diffractionSurface Science, 1992
- Theoretical photoelectron diffraction simulations for K/Si(001)2 × 1Surface Science, 1992
- An experimental low-energy photoelectron diffraction study of the InP(110) surfaceSurface Science, 1991
- An x-ray photoelectron spectroscopy study of bonding at II–VI/III–V heterovalent interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Bulk and surface electronic bands of InP(110) determined by angle-resolved photoemissionPhysical Review B, 1987
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- Angle-resolved photoemission, valence-band dispersions, and electron and hole lifetimes for GaAsPhysical Review B, 1980
- Smoothing and Differentiation of Data by Simplified Least Squares Procedures.Analytical Chemistry, 1964