1/fresistance noise complements anelasticity measurements of hydrogen motion in amorphous
- 20 August 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (8) , 1040-1043
- https://doi.org/10.1103/physrevlett.65.1040
Abstract
The time-dependent resistance fluctuations due to motion of H in amorphous PdSi metal films exhibit 1/f noise with two thermally activated peaks, one at 80 K and one shifting with H concentration between 160 and 130 K. The higher peak closely matches an internal-friction peak, showing that the same H hops can relax elastic strain and modulate resistance, while the lower peak reflects hops that do not relax strain. Thus resistance fluctuations and mechanical dissipation provide complementary probes of defect motion.Keywords
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