Effects of V/III ratio on Zn electrical activity in Zn-doped InGaA1P grown by metalorganic chemical vapor deposition
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 728-732
- https://doi.org/10.1016/0022-0248(91)90253-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Long-Term Reliability Tests for InGaAlP Visible Laser DiodesJapanese Journal of Applied Physics, 1989
- Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1988
- A study of p-type doping for AlGaInP grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substratesApplied Physics Letters, 1987
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- The growth and characterization of high quality MOVPE GaAs and GaAlAsJournal of Crystal Growth, 1984
- Zinc Doping of MOCVD GaAsJournal of Crystal Growth, 1984
- OMVPE growth of GaInPJournal of Crystal Growth, 1983
- Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET'sJournal of Crystal Growth, 1981