Microwave Frequency Digital Circuits Using GaAs Mesfet's with a Planar Self-Aligned Technology
- 1 October 1978
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper describes some circuits realised with the first generation of GaAs integrated logic circuits family. Intended for maximum speed, this family is based upon normally on field effect transistors and Schottky diodes. The use of a fully planar selfaligned technology allowed us to reach 75 ps propagation delays and binary frequency division above 3.3 GHz with 3 um minimum details on the masks. This self-alignment feature, together with a tight control of electrical parameters, resulted in a very good yield for SSI circuits.Keywords
This publication has 3 references indexed in Scilit:
- GaAs MESFET logic with 4-GHz clock rateIEEE Journal of Solid-State Circuits, 1977
- Device Quality GaAs Grown at Low Temperature by the Halide ProcessJournal of the Electrochemical Society, 1977
- Self-aligned planar technology for GaAs integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977