Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100)Surface Science, 1990
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- Chemisorption and decomposition of trimethylgallium on GaAs(100)Surface Science, 1990
- Pyrolysis of trimethylgallium on GaAs(100) surfacesApplied Physics Letters, 1990
- The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsineVacuum, 1990
- Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)Applied Physics Letters, 1989
- Atomic layer epitaxy for the growth of heterostructure devicesJournal of Crystal Growth, 1988
- Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 systemJournal of Crystal Growth, 1988
- Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaClJapanese Journal of Applied Physics, 1988
- Molecular beam investigation of adsorption kinetics on bulk metal targets: Nitrogen on tungstenSurface Science, 1972