The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine
- 10 January 1990
- Vol. 41 (4-6) , 965-967
- https://doi.org/10.1016/0042-207x(90)93835-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Atomic layer epitaxy of GaAs using triethylgallium and arsineApplied Physics Letters, 1989
- Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer EpitaxyJapanese Journal of Applied Physics, 1989
- New approach to the atomic layer epitaxy of GaAs using a fast gas streamApplied Physics Letters, 1988
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985