Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4A) , L490-492
- https://doi.org/10.1143/jjap.27.l490
Abstract
ALE growth of GaAs was reported using solid arsenic and DEGaCl. An abrupt shutoff of arsenic vapor was successfully achieved and monolayer growth was obtained independent of DEGaCl partial pressure. Grown surfaces were mirror-like at growth temperatures of 400∼550°C. Grown layers showed p-type conductivity. The carrier concentration of the grown layers was rather low compared with that reported in DEGaCl-AsH3 ALE. QMS measurements of the DEGaCl decomposition rate suggest that DEGaCl completely decomposes to GaCl before reaching the substrate, which is considered to result in lower carbon contamination.Keywords
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