InAs/AlGaSb nanoscale device fabrication using AFM oxidation process
- 1 July 1998
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 2 (1-4) , 858-861
- https://doi.org/10.1016/s1386-9477(98)00175-1
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Control of Current in 2DEG Channel by Oxide Wire Formed Using AFMJapanese Journal of Applied Physics, 1995
- Fabrication of GaAs nanostructures with a scanning tunneling microscopeApplied Physics Letters, 1993
- Surface donor contribution to electron sheet concentrations in not-intentionally doped InAs-AlSb quantum wellsApplied Physics Letters, 1992
- Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in airApplied Physics Letters, 1990
- Novel magnetoresistance oscillations in a periodically modulated two-dimensional electron gasPhysical Review Letters, 1989