Development of anisotropic microtwin distributions in GaAs grown on 4°-off (001) Si by molecular beam epitaxy
- 10 October 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (15) , 1903-1905
- https://doi.org/10.1063/1.112834
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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