Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy
- 24 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (26) , 2803-2805
- https://doi.org/10.1063/1.103792
Abstract
The distribution of microtwins in GaAs epilayer grown on Si (001) substrates tilted towards the [1̄11] direction by molecular beam epitaxy has been studied by transmission electron microscopy. An asymmetric distribution of microtwins attributed to substrate misorientation and two‐dimensional (2D) growth mode has been found. Orthogonal [1̄10] and [110] cross sections are identified by the angle of tilt in large‐angle convergent beam electron diffraction Tanaka patterns [J. Electron. Microsc. 29, 408 (1980)] taken across the GaAs/Si interface. It is found that (11̄1) microtwins are preferentially grown in GaAs epilayers on a tilted Si (001) substrate where the growth mode is 2D, while symmetrical (1̄1̄1) and (111) twins are observed when there is a reversal of twin distribution and the growth mode is 3D.Keywords
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