Structural and optical characterization of intrinsic GaN nanocolumns
- 25 January 2002
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 13 (2-4) , 1070-1073
- https://doi.org/10.1016/s1386-9477(02)00305-3
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxyApplied Physics Letters, 1999
- GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxyApplied Physics Letters, 1999
- Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 1998
- Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noiseApplied Physics Letters, 1998
- AlGaN/GaN high electron mobility field effect transistors with low 1/f noiseApplied Physics Letters, 1998
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN SubstratesJapanese Journal of Applied Physics, 1998
- InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrateApplied Physics Letters, 1998
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Trends in power semiconductor devicesIEEE Transactions on Electron Devices, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995