A study of interface states of directly bonded silicon-on-insulator structures
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (1-3) , 107-111
- https://doi.org/10.1016/s0022-0248(99)00657-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Computer controlled microwave transient photoconductivity for the nondestructive characterization of GaAs substratesMaterials Science and Engineering: B, 1997
- Noncontact Characterization for Carrier Recombination Center Related to Si-SiO2 InterfaceJapanese Journal of Applied Physics, 1993
- New insights on the electronic properties of the trivalent silicon defects at oxidized 〈100〉 silicon surfacesApplied Physics Letters, 1990
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- Simultaneous measurement of recombination lifetime and surface recombination velocityJournal of Applied Physics, 1984
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981