Noncontact Characterization for Carrier Recombination Center Related to Si-SiO2 Interface
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3B) , L395
- https://doi.org/10.1143/jjap.32.l395
Abstract
The energy levels of carrier recombination centers originating from an Si-SiO2 interface were investigated for the first time by means of a noncontact and nondestructive laser/microwave photoconductance technique. An energy level of the carrier recombination center around 0.2 eV, which can be attributed to a trivalent silicon defect, i.e., the P b0 center, was obtained from the temperature dependence of the Shockley-Read-Hall lifetime for (100) silicon wafers with native or thermal oxide.Keywords
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