Noncontact minority-carrier lifetime measurement at elevated temperatures for metal-doped Czochralski silicon crystals
- 1 June 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (11) , 7168-7171
- https://doi.org/10.1063/1.344548
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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