Electroluminescence emission from indium oxide and indium-tin-oxide
- 1 November 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (9) , 3556-3558
- https://doi.org/10.1063/1.335730
Abstract
Electroluminescence emission from indium‐tin‐oxide (ITO) and indium oxide films incorporated in a Si‐rich SiO2‐SiO2‐ITO (In2O3) multiple‐layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.This publication has 9 references indexed in Scilit:
- Electron heating in silicon dioxide and off-stoichiometric silicon dioxide filmsJournal of Applied Physics, 1985
- A study of the electrical and luminescence characteristics of a novel Si-based thin film electroluminescent deviceJournal of Applied Physics, 1983
- A new low-voltage Si-compatible electroluminescent deviceIEEE Electron Device Letters, 1982
- Evaporation of High Quality In2 O 3 Films from In2 O 3 / In Source—Evaporation Chemistry and ThermodynamicsJournal of the Electrochemical Society, 1981
- Work function of In2O3 film as determined from internal photoemissionApplied Physics Letters, 1980
- High-quality transparent conductive indium oxide films prepared by thermal evaporationApplied Physics Letters, 1980
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979
- The operation of the semiconductor-insulator-semiconductor solar cell: ExperimentJournal of Applied Physics, 1979
- Transparent Conducting CoatingsAnnual Review of Materials Science, 1977