High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate
- 8 May 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (19) , 2680-2682
- https://doi.org/10.1063/1.126442
Abstract
We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon–on–insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.Keywords
This publication has 7 references indexed in Scilit:
- Photoluminescence and X-ray characterization of relaxed Si1 − xGex alloys grown on silicon on insulator (SOI) and implanted SOI substratesJournal of Crystal Growth, 1997
- Relaxed Si1−xGex films with reduced dislocation densities grown by molecular beam epitaxyJournal of Crystal Growth, 1995
- Strain transfer between thin films on buried oxide and its application in heteroepitaxial crystal growthPhilosophical Magazine Letters, 1995
- New approach to the growth of low dislocation relaxed SiGe materialApplied Physics Letters, 1994
- Characterization of Si1−xGex/Si (100) heterostructures by photoluminescence and admittance spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991
- Near-band-gap photoluminescence of Si-Ge alloysPhysical Review B, 1989