GaAs/AlAs monolayer superlattices: A new candidate for a highly spin-polarized electron source
- 30 April 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 62 (1) , 1-3
- https://doi.org/10.1016/0038-1098(87)90071-8
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1985
- Raman scattering from GaAsAlAs monolayer-controlled superlatticesSolid State Communications, 1985
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985
- Long-Range Order inPhysical Review Letters, 1985
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- Mono- and Bi-Layer Superlattices of GaAs and AlAsJapanese Journal of Applied Physics, 1984
- AlSb–GaSb and AlAs–GaAs Monolayer Superlattices Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1984
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978
- Absorption, refractive index, and birefringence of AlAs-GaAs monolayersJournal of Applied Physics, 1977
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976