Strong Thickness Dependence of Photoelectronic Properties in Hydrogenated Amorphous Silicon

This publication has 5 references indexed in Scilit:

• ELLIPSOMETRIC STUDY OF a-Si:H NUCLEATION, GROWTH, AND INTERFACES
  Published by World Scientific Pub Co Pte Ltd ,1989
• Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys
  MRS Proceedings, 1989
• Self-consistency and self-sufficiency of the photocarrier grating technique
  Applied Physics Letters, 1988
• Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAs
  Journal of Applied Physics, 1987
• Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon
  Physical Review B, 1981