Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency
- 12 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (2) , 184-186
- https://doi.org/10.1063/1.124313
Abstract
Photoluminescence (PL) from Si nanocrystals (nc-Si) dispersed in phosphosilicate glass thin films was studied. It was found that, at room temperature, the 1.4 eV PL due to the recombination of electron-hole pairs in nc-Si becomes intense as the P concentration increases. At low temperatures, an additional peak related to defects at interfaces between nc-Si and the matrix was observed at about 0.9 eV. In contrast to the 1.4 eV peak, the 0.9 eV peak became weaker with increasing P concentration and almost disappeared at a P concentration of 1.5 mol %. These results suggest that the number of interface defects decreases with increasing P concentration and that this decrease leads to an improvement of the band-edge PL of nc-Si.Keywords
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